? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c (mosfet chip capability) 120 a i d104 t c = 104 c (external lead capability) 76 a i dm t c = 25 c, pulse width limited by t jm 480 a i ar t c = 25 c 120 a e ar t c = 25 c64mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 15 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.9/6 nm/b.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 200 v v gs(th) v ds = v gs , i d = 8ma 2.0 4.0 v i gss v gs = 20 v, v ds = 0 200 n a i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 17 m ? note 1 single mosfet die features ? international standard packages ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance - easy to drive and to protect ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac motor control ? temperature and lighting controls advantages ? plus 247 tm package for clip or spring mounting ? space savings ? high power density hiperfet tm power mosfets 98636-b (9/02) plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain ixfx 120n20 v dss = 200 v ixfk 120n20 i d25 = 120 a r ds(on) = 17 m ? ? ? ? ? t rr 250 ns s g d (tab) to-264 aa (ixfk) preliminary data sheet ixys reserves the right to change limits, test conditions, and dimensions.
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfk 120n20 ixfx 120n20 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 40 77 s c iss 9100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2200 pf c rss 1000 pf t d(on) 40 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 ns t d(off) r g = 1 ? (external), 110 n s t f 35 ns q g(on) 300 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 50 nc q gd 170 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 120 a i sm repetitive; 480 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 0.8 c i rm 8a i f = 50a,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % plus247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2002 ixys all rights reserved ixfk 120n20 ixfx 120n20 v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 i d - amperes 0 20 40 60 80 100 120 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 20 40 60 80 100 120 140 160 t j - degrees c -25 0 25 50 75 100 125 150 r ds(on) - normalized 0 1 2 3 i d - amperes 0 20406080100120140160180200 r ds(on) - normalized 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d - amperes 0 20 40 60 80 100 120 140 v ds - volts 0.0 0.5 1.0 1.5 2.0 i d - amperes 0 20 40 60 80 100 120 140 160 v gs = 10v t j = 125 o c t j = 25 o c 5v t j = 25 o c t j = 25 o c t j = 125 o c 6v v gs = 10v 9v 8v v gs = 10v 9v 8v t j = 125 o c t j = -40 o c i d = 120a i d = 60a v gs = 10v 7v 7v 5v 6v fig. 1. output characteristics at 25 o c fig. 2. output characteristics at 125 o c fig. 3. r ds(on) vs. drain current fig. 4. r ds(on) vs. t j fig. 5. drain vs. case temperature fig. 6. admittance curves
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfk 120n20 ixfx 120n20 pulse width - seconds 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.02 0.04 0.06 0.08 0.20 0.40 0.01 0.10 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 1000 10000 v sd - volts 0.40.60.81.01.21.4 i d - amperes 0 20 40 60 80 100 120 140 160 180 gate charge - nc 0 100 200 300 400 500 v gs - volts 0 2 4 6 8 10 12 14 16 crss coss ciss v ds =100v i d =60a i g =10ma f = 1 mhz t j =125 o c 500 20000 5000 t j =25 o c fig. 7. gate charge characteristic curve fig. 8. capacitance curves fig. 9. source current vs. source to drain voltage fig. 10. maximum thermal impedance
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